IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.
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Drain Current Current regulator Same type as D. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Thermal pad contour optional with dimensions D1 and E1. Please note that some Vishay documentation may still make reference to the IEC definition.
IRFP440 MOSFET. Datasheet pdf. Equivalent
Products may be manufactured at one of several qualified locations. Case Temperature tr td off tf Fig.
Lead finish uncontrolled in L1. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of urfp440 product. Dimension D and E do not include mold flash. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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IRFP Datasheet(PDF) – International Rectifier
Mold flash shall not exceed 0. To the irffp440 extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
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These dimensions are measured at the outermost extremes of the plastic body. Repetitive rating; pulse width limited by maximum junction temperature see fig.