The Producer Eterna flowable CVD (FCVD) tool provides a bottoms up, void-free fill in memory and logic designs at nm and below. Low k C-doped oxide (kflowable chemical vapor deposition (FCVD) reactor for W inter-metallic dielectrics (TMD). Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD. Oxide for Shallow Trench Isolation of finFET Integration. J. Li1, J. Bruley2.
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Browse subjects Browse through journals Browse through conferences. In this or other embodiments, it is understood that the steps of the methods described herein may be performed in a variety of orders, may be performed sequentially or concurrently e. The porosity of the film was measured by ellipsometric porosimetry.
Described herein is a process for the fabrication of an electronic device. In other embodiments, any one or more of substituents R 1R 2 and R 3 are not linked. In another embodiment of the invention, a composition comprises an oligomer obtained from the inventive precursor and at least one of oxygen or nitrogen containing source.
Significant levels of chloride in the final product can cause the silicon precursors to degrade. In this work, we report the application of flowable chemical vapor deposition FCVD technology in subnm devices and flash devices.
More particularly, embodiments of the invention provide methods and systems of forming silicon oxide film with increased density flowanle achieve void free gap fill for trenches having a high aspect ratio. The high electron dose of voltage contrast inspection for the detection of nickel silicide piping defects.
Flowable CVD Process Application for Gap Fill at Advanced Technology
The compositions or formulations described herein and methods using same overcome the problems of the prior art by depositing a silicon-containing film on at least a portion of the substrate surface that provides desirable film properties upon post-deposition treatment. In embodiments wherein the silicon-containing precursor comprises a compound having Formula I c:.
Thus, such films are suitable for use as low-k material applications. For those embodiments relating to a composition comprising a solvent s and at least one silicon-containing compound glowable herein, the solvent or mixture thereof selected does not react with the silicon compound.
Flowable CVD Process Application for Gap Fill at Advanced – Technische Informationsbibliothek (TIB)
In embodiments wherein the silicon-containing precursor comprises a compound having Formula I bexamples of precursors include the following:. In these or other embodiments, the substrate comprises a semiconductor substrate comprising a surface feature. In one aspect, the invention described herein provides a method for depositing a silicon-containing film, the method comprising: Alternatively, the difference between the boiling points ranges from any one or more of the following end-points: Film densities typically range from 1.
Typical film thickness ranged from 10 to nm. For example, the addition of carbon to the network may lower the dielectric constant of the resultant film. After curing the flowable liquid oligomer forms a solid carbon doped porous OSG. The respective step of supplying the compounds and other reagents may be performed by varying the duration of the time for supplying them to change the stoichiometric composition of the resulting silicon-containing film.
The method of claim 1 wherein the plasma is selected from the group consisting of an in-situ or remote plasma source based plasma comprising carbon or hydrocarbon, an in-situ or remote plasma source based plasma comprising hydrocarbon and helium, an in-situ or remote plasma source based plasma comprising hydrocarbon and argon, an in-situ or remote plasma source based plasma comprising carbon dioxide, an in-situ or remote plasma source based plasma comprising carbon monoxide, an in-situ or remote plasma source based plasma comprising a hydrocarbon and hydrogen, an in-situ or remote plasma source based plasma comprising a hydrocarbon and nitrogen, an in-situ or remote plasma source based plasma comprising hydrocarbon and oxygen, and mixture thereof.
In certain embodiments, any one or more of substituents R 1R 2and R 3 in the formulae described above can be linked with a C—C bond in the above formula to form a ring structure when they are not hydrogen.
In some case, the vaporized precursors can pass through a plasma generator. In embodiments wherein the deposition involves plasma, the plasma-generated process may comprise a direct plasma-generated process in which plasma is directly generated in the reactor, or alternatively a remote plasma-generated process in which plasma is generated outside of the reactor and supplied into the reactor.
Accordingly, in one aspect, the present development provides a method for depositing a silicon-containing film, the glowable comprising: Referring now to FIG.
In one embodiment of the invention, at least one of the following films or features can be formed or deposited upon the inventive silicon containing film: The substrate may be coated with a variety of materials well known in the art including films of silicon oxide, silicon nitride, amorphous carbon, silicon oxycarbide, silicon oxynitride, silicon carbide, gallium arsenide, gallium nitride and the like.
Applied Materials Enables Advanced Microchip Designs with Breakthrough Flowable CVD Technology
Energy is applied to the at least one silicon-containing compound, nitrogen-containing source if employedoxygen source, other precursors or combination thereof to induce reaction and to form the silicon-containing film or coating on the substrate. The experimental design includes: Examples of compounds of Formula I c include diacetoxydimethylaminoxymethylsilane, diacetoxydi methylethyl aminoxymethylsilane, and diacetoxydiethylaminoxymethylsilane.
In one embodiment, a liquid delivery system may be utilized.
In one particular embodiment, the temperature of the substrate is less than the walls of the chamber.
As previously mentioned, the method deposits a film upon at least a portion of the surface of a substrate comprising a surface feature. The precursor of claim 14 comprising diacetoxydimethylsilane and at least one oxygen containing source. In another embodiment, the plasma source is selected from but not limited to the group consisting of a carbon source plasma, including a hydrocarbon plasma, a plasma comprising hydrocarbon and helium, a plasma comprising hydrocarbon and argon, carbon dioxide plasma, carbon monoxide plasma, a plasma comprising hydrocarbon and hydrogen, a plasma comprising hydrocarbon and a nitrogen source, a plasma comprising hydrocarbon and an oxygen source, and mixture thereof.
The compositions can be pre-mixed compositions, pre-mixtures mixed before being used in the deposition processor in-situ mixtures mixed during the deposition process.
A SumoBrain Solutions Company. The method of claim 1 wherein the acyloxysilane having the Formula I a is selected from the group consisting of: Such films are not suitable for low-k film applications. The organosilicate glass films of the present invention are preferably capable of adhering to at least one of the foregoing materials sufficiently to pass a conventional pull test, such as an ASTM Da tape pull test.
Exemplary alkenyl groups include, but are not limited to, ethynyl. The precursor of claim 12 further comprising at least one solvent.