Symbol. Parameter. Value. Unit. BFY BFY VCBO. Collector-Base Voltage ( IE = 0). V. VCEO. Collector-Emitter Voltage (IB = 0). V. VEBO. BFY51 datasheet, BFY51 pdf, BFY51 data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose. BFY51 Transistor Datasheet pdf, BFY51 Equivalent. Parameters and Characteristics.
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Product overview Type number More information.
BFY51 Datasheet(PDF) – NXP Semiconductors
If this is in any sort of push-pull amplifier, you should probably replace all the transistors and not just the faulty one to maintain symmetry in the circuit. We make every effort to understand the difficulties More information. Stress above one or more of the limiting values may cause permanent damage to the device. N-channel enhancement mode field-effect transistor Rev.
This data sheet contains final product specifications. No liability will be accepted by the publisher for any consequence of its use.
Sign up using Email and Password. BB Low-voltage variable capacitance double diode. General description PNP general-purpose transistors. EdwinvanMierlo A question being on-topic elsewhere does not make it off-topic here.
This Datasheet is presented by the m anufacturer. Post as a guest Name.
Product data sheet Supersedes data of Oct Product specification IC24 Data Handbook. What is a suitable replacement?
Product specification Supersedes data of Aug NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with.
Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips dattasheet any damages resulting vfy51 such improper use or sale Apr 22 7. V SCA54 All rights are reserved. High oltage Switching Features: High-speed switching No secondary breakdown.
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Benefit is lower component count, internal compensation for temperature and current gain spread. I have to replace a faulty BFY51 Transistor.
Note that as Phil said, you’ll dayasheet replacing multiple components in your circuit — and it’s far from unlikely you’ll also have to change a few bias resistors to keep the same performance. Can anyone please suggest a substitute for the BFY51 transistor? Email Required, but never shown.
Low voltage PNP power transistor. Lance 4 Designed for general-purpose amplifier and low speed switching applications.
DATA SHEET. BFY50; BFY51; BFY52 NPN medium power transistors DISCRETE SEMICONDUCTORS Apr 22
All leads are isolated. A linear amplifier 1. We make every effort to understand the difficulties. High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high datashedt speed Applications.
NPN general-purpose transistors in small plastic packages. Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information.
BFY51 Datasheet pdf – Leaded Small Signal Transistor General Purpose – Central Semiconductor
Please v isit our website for pricing and availability at www. To make this website work, we log user data and share it with processors. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Of course without knowing the precise details of the circuit it’s impossible to say for sure if it will work. Secondary protection for DSL lines. Product specification Supersedes data of Apr RF transistor with internal bias circuit.
Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Characteristic Symbol Rating Unit.
Quick reference data Rev. Product specification Supersedes data of Sep General description NPN general-purpose transistors.